Technical details |
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Sustainability certificates | RoHS |
Features |
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Compatible chipsets | Intel® H110 |
Row cycle time | 46.5 ns |
Programming power voltage (VPP) | 2.5 V |
ECC | N |
Refresh row cycle time | 260 ns |
Memory voltage | 1.2 V |
Internal memory | 8 GB |
Memory form factor | 288-pin DIMM |
Row active time | 33 ns |
Buffered memory type | Unregistered (unbuffered) |
JEDEC standard | Y |
CAS latency | 15 |
Memory clock speed | 2133 MHz |
Memory layout (modules x size) | 1 x 8 GB |
Memory bandwidth (max) | 17 GB/s |
Memory channels | Dual-channel |
Component for | PC/Server |
Internal memory type | DDR4 |
Operational conditions |
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Operating temperature (T-T) | 0 - 85 °C |
Storage temperature (T-T) | -55 - 100 °C |
Weight & dimensions |
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Height | 31 mm |
Width | 133 mm |
Weight | 18 g |
Packaging data |
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Package width | 88 mm |
Package weight | 36 g |
Package height | 168 mm |
Other features |
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Chips organisation | x8 FBGA DRAM chip |
Country of origin | China |