| Technical details |
|---|
| Sustainability certificates | RoHS |
| Features |
|---|
| Compatible chipsets | Intel® H110 |
| Row cycle time | 46.5 ns |
| Programming power voltage (VPP) | 2.5 V |
| ECC | N |
| Refresh row cycle time | 260 ns |
| Memory voltage | 1.2 V |
| Internal memory | 8 GB |
| Memory form factor | 288-pin DIMM |
| Row active time | 33 ns |
| Buffered memory type | Unregistered (unbuffered) |
| JEDEC standard | Y |
| CAS latency | 15 |
| Memory clock speed | 2133 MHz |
| Memory layout (modules x size) | 1 x 8 GB |
| Memory bandwidth (max) | 17 GB/s |
| Memory channels | Dual-channel |
| Component for | PC/Server |
| Internal memory type | DDR4 |
| Operational conditions |
|---|
| Operating temperature (T-T) | 0 - 85 °C |
| Storage temperature (T-T) | -55 - 100 °C |
| Weight & dimensions |
|---|
| Height | 31 mm |
| Width | 133 mm |
| Weight | 18 g |
| Packaging data |
|---|
| Package width | 88 mm |
| Package weight | 36 g |
| Package height | 168 mm |
| Other features |
|---|
| Chips organisation | x8 FBGA DRAM chip |
| Country of origin | China |
